Full list of publications


  • Bachelor of Science with Education (Physics and Mathematics) from the University of Dar es Salaam, Tanzania, 1999.
  • Master’s Degree in Condensed Matter Physics and Biophysics from the Norwegian University of Science and Technology, Norway, 2007.
  • PhD in Materials Science and Engineering from the Norwegian University of Science and Technology, Norway, 2012.

Professional Experience

Dr. Kivambe has worked as postdoctoral associate at Massachusetts Institute of Technology (MIT) where he studied a variety of novel crystalline silicon materials including mono-like silicon, kerfless epitaxial silicon and non-contact crucible silicon, in addition to general multicrystalline silicon. 

Selected Publications


  • M. M. Kivambe, G. Stokkan, T. Ervik, B.Ryningen and O. Lohne, The Microstructure of Dislocation Clusters in Industrial Directionally Solidified Multicrystalline Silicon, Journal of Applied Physics, 110 (6) (2011): pp. 063524, doi:10.1063/1.3641978
  • B. Ryningen, G. Stokkan, M. Kivambe, T. Ervik, O. Lohne, Growth of dislocation clusters during directional solidification of multicrystalline silicon ingots, Acta Materialia, 59 (20) (2011): pp. 7703-7710, doi: 10.1016/j.actamat.2011.09.002
  • T. Ervik, M. Kivambe, G. Stokkan, B. Ryningen, and O. Lohne, High temperature annealing of bent multicrystalline silicon rods, Acta Materialia, 60(19), (2012) : 6762-6769, doi: 10.1016/j.actamat.2012.08.049
  • M. Kivambe, D. M. Powell, S. Castellanos, M. Ann Jensen, A.E. Morishige, K. Nakajima, K. Morishita, R. Murai, T. Buonassisi, Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method, Journal of Crystal Growth 407 (0), (2014): pp. 31-36, doi: 10.1016/j.jcrysgro.2014.08.021