Dr. Maulid KivambeScientist | Materials Science and Engineering
Dr. Kivambe’s research interest is on improving the quality of low-cost crystalline silicon solar cell materials through control and/or engineering of impurities and structural defects. His research focus is on fundamental understanding of minority-career lifetime-limiting defects, defect reduction and performance improvement. Electrical characterization including lifetime spectroscopy (PL, µPCD, QSSPC) and structural characterization with electron microscopy (TEM, SEM, FIB, EBSD) are his main research tools.
- Bachelor of Science with Education (Physics and Mathematics) from the University of Dar es Salaam, Tanzania, 1999.
- Master’s Degree in Condensed Matter Physics and Biophysics from the Norwegian University of Science and Technology, Norway, 2007.
- PhD in Materials Science and Engineering from the Norwegian University of Science and Technology, Norway, 2012.
Dr. Kivambe has worked as postdoctoral associate at Massachusetts Institute of Technology (MIT) where he studied a variety of novel crystalline silicon materials including mono-like silicon, kerfless epitaxial silicon and non-contact crucible silicon, in addition to general multicrystalline silicon.
- M. M. Kivambe, G. Stokkan, T. Ervik, B.Ryningen and O. Lohne, The Microstructure of Dislocation Clusters in Industrial Directionally Solidified Multicrystalline Silicon, Journal of Applied Physics, 110 (6) (2011): pp. 063524, doi:10.1063/1.3641978
- B. Ryningen, G. Stokkan, M. Kivambe, T. Ervik, O. Lohne, Growth of dislocation clusters during directional solidification of multicrystalline silicon ingots, Acta Materialia, 59 (20) (2011): pp. 7703-7710, doi: 10.1016/j.actamat.2011.09.002
- T. Ervik, M. Kivambe, G. Stokkan, B. Ryningen, and O. Lohne, High temperature annealing of bent multicrystalline silicon rods, Acta Materialia, 60(19), (2012) : 6762-6769, doi: 10.1016/j.actamat.2012.08.049
- M. Kivambe, D. M. Powell, S. Castellanos, M. Ann Jensen, A.E. Morishige, K. Nakajima, K. Morishita, R. Murai, T. Buonassisi, Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method, Journal of Crystal Growth 407 (0), (2014): pp. 31-36, doi: 10.1016/j.jcrysgro.2014.08.021